2007
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, D.J. Mowbray
Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.
Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer
H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, D.J. Mowbray
Electron. Lett. vol. 43, pp. 670-672, 2007.
2006
Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser
C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, M. Hopkinson
IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.
1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, M.S. Skolnick
Electron. Lett. vol. 42, pp. 922-923, 2006.
High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins
Proceedings of SPIE, vol. 6184, p. 18417, 2006.
Dilute nitride-based 1.3-μm high performance lasers
P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson
Proceedings of SPIE, vol. 6184, p. D1840, 2006.
High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, D.J. Mowbray
IEE Proc. Optoelectronics vol. 153, pp. 280-283, 2006.
1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density
M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, R. Airey
Electron. Lett. vol. 42, pp. 923-924, 2006.
Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells
H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, A.G. Cullis
Appl. Phys. Lett. vol. 88, pp. 191907-191909, 2006.
p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, R.A. Hogg
Appl. Phys. Lett. vol. 89, pp. 073113-073115, 2006.
2005
Numerical and theoretical analysis of the crosstalk in linear optical amplifiers
C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 41, pp. 636-641, 2005.
Theoretical analysis of gain and threshold current density for long wavelength GaAs-based quantum dots lasers
S.L. Deng, Y.Z. Huang, C.Y Jin, L.J Yu
J. Semiconductors (China) vol. 26, pp. 1898-1904, 2005.
Numerical analysis of probe light energy in cross-gain modulation of SOA
C.Liu, C.Y. Jin, Y.Z. Huang, N.H. Zhu
J. Semiconductors (China) vol. 26, pp. 812-815, 2005.
2004
Detailed model and investigation of gain saturation and carrier spatial hole burning for semiconductor optical amplifier with gain clamping by a vertical laser field
C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 40, pp. 513-518, 2004.
Wavelength conversion using gain-clamped semiconductor optical amplifier
C.Y. Jin, Y.Z. Huang
Semiconductor Optoelectronics (China) vol. 25, pp. 29-31, 2004.