2010
Long rectangle resonator 1550 nm AlGaInAs/InP lasers
S.J. Wang, Y.Z. Huang, Y.D. Yang, J.D. Lin, K.J. Che, J.L. Xiao, Y. Du
Journal of the Optical Society of America B, vol.27, pp.719-724, 2010.
Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada
Appl. Phys. Lett. vol. 96, pp.151104(1-3), 2010.
Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity
C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane
IEEE J. Quantum Electron. vol. 46, pp. 1582-1589, 2010.
All-optical switch using InAs quantum dots in a vertical cavity
C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Conference Proceeding of the 22nd International Conference on Indium Phosphide and Related Materials, pp. 249-252, 2010.
Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices
C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Proceedings of SPIE, vol. 7610, p. 76100Q, 2010.
2009
Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Appl. Phys. Lett. vol. 95, pp. 021109(1-3), 2009.
Whispering-gallery microcavity semiconductor lasers suitable for photonic integrated circuits and optical interconnects
Y.Z. Huang, Y.D. Yang, S.J. Wang, J.L. Xiao, K.J. Che, Y. Du
Science in China Series E: Technological Sciences, vol.52, pp.3447-3453, 2009.
Equilateral-Triangle and Square Resonator Semiconductor Microlasers
Y.D. Yang, Y.Z. Huang, K.J. Che, S.J. Wang, Y.H. Hu, Y. Du
IEEE Journal of Selected Topics in Quantum Electronics, vol.15, issue. 3, pp.879-884, 2009.
2008
Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels
C.Y. Jin, H.Y. Liu, Q. Jiang, M. Hopkinson, O. Wada
Appl. Phys. Lett. vol. 93, pp. 161103(1-3), 2008.
Low-threshold 1.3 μm GaInNAs quantum well lasers using quaternary barriers
C.Y. Jin, H.Y. Liu, S.Y. Zhang, M. Hopkinson
IEEE Photon. Technol. Lett. vol. 20, pp. 942-944, 2008.
1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther, A.G. Cullis
Appl. Phys. Lett. vol. 92, pp. 111906(1-3), 2008.
Comparing InGaAs and GaAsSb metamorphic buffer layers on GaAs substrates for InAs quantum dots emitting at 1.55 μm
Y. Qiu, T. Walther, H.Y. Liu, C.Y. Jin, M. Hopkinson, A.G. Cullis
Microscopy Semi. Mat. vol. 120, pp. 263-268, 2007.
Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes
Z.Y. Zhang, I.J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, R.A. Hogg
Appl. Phys. Lett. vol. 91, pp. 081112(1-3), 2007.
Directional emission InP/GaInAsP square-resonator microlasers
Y.Z. Huang, K.J. Che, Y.D. Yang, S.J. Wang
Optics Letters, vol.33, pp.2170-2172, 2008.
2007
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.