Biography
Prof Chaoyuan Jin received Bachelor degree in Physics from Nanjing University (China), M.Sc. degree in Microelectronics from Institute of Semiconductors, Chinese Academy of Sciences (China), and Ph.D. degree in Electronic Engineering from University of Sheffield (UK). He was awarded a JSPS Fellowship and worked on quantum dot switches at Kobe University (Japan). In 2010, he joined Eindhoven University of Technology (Netherlands) working on ultrafast control of cavity quantum electrodynamics based on single quantum dots in photonic crystal cavities. He joined EFFECT Photonics B.V in 2013. In his role as a Senior Photonics Scientist, he developed high-speed optical transceivers for short-reach optical communications based on generic photonic integration technologies. In 2015, He was awarded a Vice-Chancellor’s Fellowship, working as a Lecturer developing research programs on ultrafast photonic devices at the Department of Electronic and Electrical Engineering, University of Sheffield (UK). He is now working at Zhejiang University (China) as a Hundred Talents Professor. His current research focuses on nanophotonic integration, quantum materials, nonlinear optics and optical computation.
2011
Observation of phase shifts in vertical cavity quantum dot switches
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson
Appl. Phys. Lett. vol. 98, pp. 231101(1-3), 2011.
Highlighted by Phys.org
2010
Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada
Appl. Phys. Lett. vol. 96, pp.151104(1-3), 2010.
Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity
C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane
IEEE J. Quantum Electron. vol. 46, pp. 1582-1589, 2010.
All-optical switch using InAs quantum dots in a vertical cavity
C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Conference Proceeding of the 22nd International Conference on Indium Phosphide and Related Materials, pp. 249-252, 2010.
Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices
C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Proceedings of SPIE, vol. 7610, p. 76100Q, 2010.
2009
Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Appl. Phys. Lett. vol. 95, pp. 021109(1-3), 2009.
2008
Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels
C.Y. Jin, H.Y. Liu, Q. Jiang, M. Hopkinson, O. Wada
Appl. Phys. Lett. vol. 93, pp. 161103(1-3), 2008.
Low-threshold 1.3 μm GaInNAs quantum well lasers using quaternary barriers
C.Y. Jin, H.Y. Liu, S.Y. Zhang, M. Hopkinson
IEEE Photon. Technol. Lett. vol. 20, pp. 942-944, 2008.
1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther, A.G. Cullis
Appl. Phys. Lett. vol. 92, pp. 111906(1-3), 2008.
Comparing InGaAs and GaAsSb metamorphic buffer layers on GaAs substrates for InAs quantum dots emitting at 1.55 μm
Y. Qiu, T. Walther, H.Y. Liu, C.Y. Jin, M. Hopkinson, A.G. Cullis
Microscopy Semi. Mat. vol. 120, pp. 263-268, 2007.
Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes
Z.Y. Zhang, I.J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, R.A. Hogg
Appl. Phys. Lett. vol. 91, pp. 081112(1-3), 2007.
2007
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, D.J. Mowbray
Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.
Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer
H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, D.J. Mowbray
Electron. Lett. vol. 43, pp. 670-672, 2007.
2006
Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser
C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, M. Hopkinson
IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.