Biography
Prof Chaoyuan Jin received Bachelor degree in Physics from Nanjing University (China), M.Sc. degree in Microelectronics from Institute of Semiconductors, Chinese Academy of Sciences (China), and Ph.D. degree in Electronic Engineering from University of Sheffield (UK). He was awarded a JSPS Fellowship and worked on quantum dot switches at Kobe University (Japan). In 2010, he joined Eindhoven University of Technology (Netherlands) working on ultrafast control of cavity quantum electrodynamics based on single quantum dots in photonic crystal cavities. He joined EFFECT Photonics B.V in 2013. In his role as a Senior Photonics Scientist, he developed high-speed optical transceivers for short-reach optical communications based on generic photonic integration technologies. In 2015, He was awarded a Vice-Chancellor’s Fellowship, working as a Lecturer developing research programs on ultrafast photonic devices at the Department of Electronic and Electrical Engineering, University of Sheffield (UK). He is now working at Zhejiang University (China) as a Hundred Talents Professor. His current research focuses on nanophotonic integration, quantum materials, nonlinear optics and optical computation.
2009
Optical nonlinearity of InAs quantum dots in a cavity for all-optical switches
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
The 2009 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2009.
Temperature dependent carrier tunnelling in InAs/GaAs quantum dots by using a dilute nitride quantum well injector
S. Ohta, C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, O. Wada
The 2009 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2009.
Quantum dots in a vertical cavity for all-optical switching devices
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
The 2009 international conference on Solid State Devices and Materials (SSDM), Sendai, Japan, 2009.
Theoretical design of all-optical quantum-dot switches with an asymmetric cavity structure
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
The 70th autumn meeting of the Japan Society of Applied Physics, Toyama, Japan, 2009.
Vertical-cavity all-optical quantum dot switches utilizing the inter-subband relaxation of carriers
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
The 70th autumn meeting of the Japan Society of Applied Physics, Toyama, Japan, 2009.
All-optical switching using InAs/GaAs quantum dots within a vertical cavity structure
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
The 14th international conference on modulated semiconductor structures (MSS), Kobe, Japan, 2009.
All-optical switches based on InAs/GaAs quantum dots in a vertical cavity
C.Y. Jin, O. Wada, M. Hopkinson, O. Kojima, T. Kita, K. Akahane
UK semiconductors 2009, Sheffield, UK, 2009.
Investigation of an ultra-fast all-optical quantum dot switch with a vertical cavity structure
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
The 56th spring meeting of the Japan Society of Applied Physics and Related Societies, Tsukuba, Japan, 2009.
2008
Theoretical design of a vertical-cavity quantum-dot switch
C.Y. Jin, O. Kojima, T. Kita, O. Wada
The 2008 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2008.
Novel, simple model for high temperature stability of InAs/GaAs self-assembled quantum dot lasers with optimum p-type modulation doping
C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, D.J. Mowbray, M. Hopkinson, O. Wada
The 2008 international conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 2008.
1.55-μm InAs quantum dots grown on GaAsSb/GaAs metamorphic buffer layer
H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther A.G. Cullis
The 2008 international conference on Molecular Beam Epitaxy (MBE2008), Vancouver, Canada, 2008.
Effects of photon and thermal coupling mechanism on self-assembled InAs/GaAs quantum dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson
One-day quantum dot meeting, Imperial College, London, UK, 2008.
2007
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson
UK Compound Semiconductors 2007, Sheffield, UK, 2007.
Photon coupling mechanism in 1.3-μm quantum-dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.
Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure
C.Y. Jin, H.Y. Liu, S.Y. Zhang, R. Airey M. Hopkinson
The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.