2008
Comparing InGaAs and GaAsSb metamorphic buffer layers on GaAs substrates for InAs quantum dots emitting at 1.55 μm
Y. Qiu, T. Walther, H.Y. Liu, C.Y. Jin, M. Hopkinson, A.G. Cullis
Microscopy Semi. Mat. vol. 120, pp. 263-268, 2007.
Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes
Z.Y. Zhang, I.J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, R.A. Hogg
Appl. Phys. Lett. vol. 91, pp. 081112(1-3), 2007.
Directional emission InP/GaInAsP square-resonator microlasers
Y.Z. Huang, K.J. Che, Y.D. Yang, S.J. Wang
Optics Letters, vol.33, pp.2170-2172, 2008.
2007
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, D.J. Mowbray
Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.
Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer
H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, D.J. Mowbray
Electron. Lett. vol. 43, pp. 670-672, 2007.
2006
Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser
C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, M. Hopkinson
IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.
1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, M.S. Skolnick
Electron. Lett. vol. 42, pp. 922-923, 2006.
High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins
Proceedings of SPIE, vol. 6184, p. 18417, 2006.
Dilute nitride-based 1.3-μm high performance lasers
P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson
Proceedings of SPIE, vol. 6184, p. D1840, 2006.
High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, D.J. Mowbray
IEE Proc. Optoelectronics vol. 153, pp. 280-283, 2006.
1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density
M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, R. Airey
Electron. Lett. vol. 42, pp. 923-924, 2006.
Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells
H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, A.G. Cullis
Appl. Phys. Lett. vol. 88, pp. 191907-191909, 2006.
p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, R.A. Hogg
Appl. Phys. Lett. vol. 89, pp. 073113-073115, 2006.
2005
Numerical and theoretical analysis of the crosstalk in linear optical amplifiers
C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 41, pp. 636-641, 2005.