2010
Multimode resonances of metallic-confined square-resonator microlasers
K.J. Che, Y.D. Yang, Y.Z. Huang
Applied Physics Letters, vol.96, pp. 051104-051106, 2010.
Mode characteristics for square resonators with a metal confinement layer
K.J. Che, Y.D. Yang, Y.Z. Huang
IEEE Journal of Quantum Electronics, vol. 46, issue 3, pp. 414-420, 2010.
Investigation on multiple-port microcylinder lasers based on coupled modes
Y.Z. Huang, S.J. Wang, Y.D. Yang, J.D. Lin, K.J. Che, J.L. Xiao, Y. Du
Semiconductor Science and Technology, vol.25, issue. 10, 105005, 2010.
Future reading “microlasers are shaping up”
K.J. Che
Electronics Letters, vol.30, 2010.
Long rectangle resonator 1550 nm AlGaInAs/InP lasers
S.J. Wang, Y.Z. Huang, Y.D. Yang, J.D. Lin, K.J. Che, J.L. Xiao, Y. Du
Journal of the Optical Society of America B, vol.27, pp.719-724, 2010.
Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada
Appl. Phys. Lett. vol. 96, pp.151104(1-3), 2010.
Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity
C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane
IEEE J. Quantum Electron. vol. 46, pp. 1582-1589, 2010.
All-optical switch using InAs quantum dots in a vertical cavity
C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Conference Proceeding of the 22nd International Conference on Indium Phosphide and Related Materials, pp. 249-252, 2010.
Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices
C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Proceedings of SPIE, vol. 7610, p. 76100Q, 2010.
2009
Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity
C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, K. Akahane
Appl. Phys. Lett. vol. 95, pp. 021109(1-3), 2009.
Whispering-gallery microcavity semiconductor lasers suitable for photonic integrated circuits and optical interconnects
Y.Z. Huang, Y.D. Yang, S.J. Wang, J.L. Xiao, K.J. Che, Y. Du
Science in China Series E: Technological Sciences, vol.52, pp.3447-3453, 2009.
Equilateral-Triangle and Square Resonator Semiconductor Microlasers
Y.D. Yang, Y.Z. Huang, K.J. Che, S.J. Wang, Y.H. Hu, Y. Du
IEEE Journal of Selected Topics in Quantum Electronics, vol.15, issue. 3, pp.879-884, 2009.
2008
Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels
C.Y. Jin, H.Y. Liu, Q. Jiang, M. Hopkinson, O. Wada
Appl. Phys. Lett. vol. 93, pp. 161103(1-3), 2008.
Low-threshold 1.3 μm GaInNAs quantum well lasers using quaternary barriers
C.Y. Jin, H.Y. Liu, S.Y. Zhang, M. Hopkinson
IEEE Photon. Technol. Lett. vol. 20, pp. 942-944, 2008.
1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther, A.G. Cullis
Appl. Phys. Lett. vol. 92, pp. 111906(1-3), 2008.