出版物

2007
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson
UK Compound Semiconductors 2007, Sheffield, UK, 2007.

Photon coupling mechanism in 1.3-μm quantum-dot lasers

C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.

Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure

C.Y. Jin, H.Y. Liu, S.Y. Zhang, R. Airey M. Hopkinson
The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.

Photon coupling model for the negative T0 in self-assembled quantum-dot lasers

C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
One day quantum dot meeting, University of Nottingham, Nottingham, UK, 2007.

2006
High performance 1.34-μm GaInNAs quantum well lasers with quaternary barrier layers

C.Y. Jin, P. Navaretti, H.Y. Liu, R. Airey, M. Hopkinson
UK Compound Semiconductors 2006, Sheffield, UK, 2006.

Auger Recombination is NOT necessary to explain the temperature dependence of threshold in p-doped quantum dot lasers

P.M. Smowton, I.C. Sandall, J.D. Thomson, T. Badcock, D.J. Mowbray, C.Y. Jin, H.Y. Liu, M. Hopkinson
The 20th international semiconductor laser conference (ISLC), Hawaii, USA, 2006. (Invited)

High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins
Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)

Dilute nitride-based 1.3-μm high performance lasers

P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson
Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)

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Laser interference for nanomaterial epitaxy and the manipulation of photonic devices

C.Y. Jin
Smart China Expo, Chongqing, China, 2020 (Invited Speaker)

In-situ Laser Interference for Site-Controlled Quantum Dot Epitaxy and Microcavity Photonic Devices

C.Y. Jin, Y.R. Wang, L. Wang, X.T. Cheng, X. Lin, F. Liu, M. Hopkinson
IEEE The 9th International Conference on Information, Communication and Networks (ICICN), Xi’an, China, 2021 (Invited Speaker)

In-situ laser interference for the positioning of epitaxial quantum dots and manipulation of microcavity lasers

C.Y. Jin, Y.R. Wang, L. Wang, X.T. Cheng, X. Lin, F. Liu, M. Hopkinson
Conference on Molecular Beam Epitaxy, Liyang, China, 2021 (Session Chair and Invited Speaker)

In-situ laser interference for the positioning of epitaxial quantum dots and manipulation of microcavity lasers

C.Y. Jin
International Forum on Advanced Materials, Ningbo, China, 2021 (Invited Speaker)